Title :
Nano-scale silicon MOSFET: towards non-traditional and quantum devices
Author_Institution :
Inst. of Ind. Sci., Univ. of Tokyo, Japan
Abstract :
Nano-scale silicon MOSFETs with narrow wire channels on SOI substrates are presented. The triangular wire MOSFET can suppress the short channel effect more than double-gate and single-gate SOI MOSFETs. The wire channel MOSFETs narrower than 10 nm exhibit quantum confinement effects at room temperature. New device engineering using quantum effects is also discussed.
Keywords :
MOSFET; electron beam lithography; etching; nanotechnology; oxidation; semiconductor quantum wires; silicon-on-insulator; 10 nm; 2D steady-state Schrodinger equation; DIBL; I-V characteristics; SOI substrates; Si-SiO/sub 2/; anisotropic etching; gate length dependence; lithography; nanoscale silicon MOSFET; narrow wire channels; quantum confinement effects; quantum mechanical device engineering; selective oxidation; short channel effect suppression; three-dimensional simulation; triangular wire MOSFET; Anisotropic magnetoresistance; Etching; Fabrication; Lithography; MOSFET circuits; Nanoscale devices; Potential well; Silicon; Thickness measurement; Wire;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957959
