DocumentCode :
1668000
Title :
New microwave dielectric material for application in mobile communication
Author :
Chen, Yih-Chien ; Hsu, Wei-Yu ; Chen, Kuei-Chien ; Lin, Jing-Yuan
Author_Institution :
Dept. of Electr. Eng., Lunghua Univ. of Sci. & Technol., Taoyuan, Taiwan
fYear :
2010
Firstpage :
1224
Lastpage :
1225
Abstract :
In this study, the microwave dielectric properties of La2.98/3Ba0.01(Mg0.5Sn0.5)O3 ceramics prepared by the conventional solid-state method have been investigated for application in mobile communication. B2O3 was selected as a liquid sintering aid to lower the sintering temperature of La2.98/3Ba0.01(Mg0.5Sn0.5)O3 ceramics. It was found that the X-ray diffraction patterns of the La2.98/3Ba0.01(Mg0.5Sn0.5)O3 ceramics exhibited no significant phase difference with 0.25 wt% B2O3 additive at different sintering temperatures from 1350 to 1550 °C. The maximum values of the dielectric constant and the quality factor multiples resonant frequency (Q×f) can be obtained when the La2.98/3Ba0.01(Mg0.5Sn0.5)O3 with 0.25 wt% B2O3 additive were sintered at 1400 °C for 4h. The temperature coefficient of resonant frequency ¿f (-72 ppm/ °C) was measured for La2.98/3Ba0.01(Mg0.5Sn0.5)O3 ceramics with 0.25 wt% B2O3 sintered at 1400 °C for 4 h.
Keywords :
X-ray diffraction; barium compounds; dielectric materials; lanthanum compounds; magnesium compounds; microwave materials; mobile communication; sintering; tin compounds; LaBa(MgSn)O; X-ray diffraction patterns; liquid sintering aid; microwave dielectric material; mobile communication; sintering temperatures; solid-state method; temperature 1350 C to 1550 C; Additives; Ceramics; Dielectric materials; Microwave theory and techniques; Mobile communication; Resonant frequency; Solid state circuits; Temperature; Tin; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424942
Filename :
5424942
Link To Document :
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