• DocumentCode
    166801
  • Title

    ESD characterization of Germanium diodes

  • Author

    Boschke, Roman ; Linten, D. ; Hellings, Geert ; Shih-Hung Chen ; Scholz, Matthias ; Mitard, J. ; Mertens, Hans ; Witters, L. ; Van Campenhout, J. ; Verheyen, P. ; Pogany, Dionyz ; Groeseneken, Guido

  • Author_Institution
    ESAT Dept., KU Leuven, Leuven, Belgium
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    Germanium (Ge) as a high mobility channel material is an option for future PMOSFET for sub 14 nm node. This work presents the ESD robustness of planar Ge diodes on Silicon-on-Insulator (SOI) and bulk Si substrate. They show a reduced It2 with a remarkably improved clamping behavior compared to Si diodes, which is attributed to the intrinsic material properties of Germanium.
  • Keywords
    electrostatic discharge; elemental semiconductors; germanium; semiconductor diodes; silicon-on-insulator; ESD characterization; Ge; PMOSFET; SOI; Si; bulk silicon substrate; clamping behavior; high mobility channel material; intrinsic material properties; planar germanium diodes; silicon-on-insulator; Current measurement; Electrostatic discharges; Junctions; Resistance; Silicon; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166801