Title :
ESD characterization of Germanium diodes
Author :
Boschke, Roman ; Linten, D. ; Hellings, Geert ; Shih-Hung Chen ; Scholz, Matthias ; Mitard, J. ; Mertens, Hans ; Witters, L. ; Van Campenhout, J. ; Verheyen, P. ; Pogany, Dionyz ; Groeseneken, Guido
Author_Institution :
ESAT Dept., KU Leuven, Leuven, Belgium
Abstract :
Germanium (Ge) as a high mobility channel material is an option for future PMOSFET for sub 14 nm node. This work presents the ESD robustness of planar Ge diodes on Silicon-on-Insulator (SOI) and bulk Si substrate. They show a reduced It2 with a remarkably improved clamping behavior compared to Si diodes, which is attributed to the intrinsic material properties of Germanium.
Keywords :
electrostatic discharge; elemental semiconductors; germanium; semiconductor diodes; silicon-on-insulator; ESD characterization; Ge; PMOSFET; SOI; Si; bulk silicon substrate; clamping behavior; high mobility channel material; intrinsic material properties; planar germanium diodes; silicon-on-insulator; Current measurement; Electrostatic discharges; Junctions; Resistance; Silicon; Voltage measurement;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
