Title :
Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunneling
Author :
Cha, Seung-Yong ; Kim, Hyo-June ; Choi, Doo-Jin
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
Charge trap flash(CTF) memory device is the replace candidate for NAND Flash devices. In this study, we fabricated Pt/Al2O3/LaAlO3/SiO2/Si structures with various tunnel oxide thicknesses. The memory windows of the multilayer structures were about 3 V, which is sufficient for memory application in low program/erase voltages. Reliability test showed threshold voltage change of less than 10% under 104 cycles of program/erase pulses. The I-V measurement of the capacitor structure indicated about 10-4A/cm2 of leakage current at 1 V.
Keywords :
MIS capacitors; alumina; flash memories; lanthanum compounds; leakage currents; multilayers; platinum; reliability; silicon; silicon compounds; Fowler-Nordheim tunneling; I-V measurement; NAND Flash devices; Pt-Al2O3-LaAlO3-SiO2-Si; capacitor structure; charge trap flash memory device; lanthanum-aluminate charge trap; leakage current; memory windows; multilayer structures; program-erase voltages; reliability test; threshold voltage; tunnel oxide thickness; voltage 1 V; Aluminum oxide; Electron traps; Flash memory; Materials science and technology; Nonhomogeneous media; Nonvolatile memory; SONOS devices; Testing; Threshold voltage; Tunneling;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424946
