Memory characteristics of multilayer structures with lanthanum-aluminate charge trap by fowler-nordheim tunneling

Author

Cha, Seung-Yong ; Kim, Hyo-June ; Choi, Doo-Jin

Author_Institution

Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea

fYear

2010

Firstpage

1210

Lastpage

1211

Abstract

Charge trap flash(CTF) memory device is the replace candidate for NAND Flash devices. In this study, we fabricated Pt/Al₂O₃/LaAlO₃/SiO₂/Si structures with various tunnel oxide thicknesses. The memory windows of the multilayer structures were about 3 V, which is sufficient for memory application in low program/erase voltages. Reliability test showed threshold voltage change of less than 10% under 10⁴ cycles of program/erase pulses. The I-V measurement of the capacitor structure indicated about 10^-4A/cm² of leakage current at 1 V.

Keywords

MIS capacitors; alumina; flash memories; lanthanum compounds; leakage currents; multilayers; platinum; reliability; silicon; silicon compounds; Fowler-Nordheim tunneling; I-V measurement; NAND Flash devices; Pt-Al₂O₃-LaAlO₃-SiO₂-Si; capacitor structure; charge trap flash memory device; lanthanum-aluminate charge trap; leakage current; memory windows; multilayer structures; program-erase voltages; reliability test; threshold voltage; tunnel oxide thickness; voltage 1 V; Aluminum oxide; Electron traps; Flash memory; Materials science and technology; Nonhomogeneous media; Nonvolatile memory; SONOS devices; Testing; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424946

Filename

5424946