Title :
XANES investigations of Si nanocrystals obtained by implantation of silicon in SiO2 films
Author :
Mikhailov, Alexander N.
Abstract :
The electron yield spectra of samples containing Si nanocrystals obtained by implantation of silicon in SiO2 films applying synchrotron radiation is investigated. In all the obtained XANES spectra, two edges are observed first is related with silicon nanocrystals (nc-Si) while the second is connected with SiO2 matrix. Shape of the spectra indicates a strong disordering for both phases (nc-Si and SiOx). Cyclical collection of total dose and time of annealing results in a decrease of ratio of intensities for nc-Si edge to that of SiOx.
Keywords :
XANES; annealing; elemental semiconductors; ion implantation; silicon; silicon compounds; Si-SiOx; SiO2 films; XANES; annealing; electron yield spectra; ion implantation; nanocrystals; nc-Si edge; synchrotron radiation; Annealing; Crystalline materials; Crystallization; Electrons; Nanocrystals; Nanostructured materials; Semiconductor films; Semiconductor thin films; Silicon; Synchrotron radiation;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619549
