DocumentCode
1668195
Title
Electrical characterization of single nanowire based ZnO Schottky diodes
Author
Das, S.N. ; Kar, J.P. ; Choi, J.H. ; Moon, K.J. ; Lee, T.I. ; Myoung, J.M.
Author_Institution
Yonsei Univ., Seoul, South Korea
fYear
2010
Firstpage
1197
Lastpage
1198
Abstract
In this study, the barrier height values of Au/n-ZnO nanowire Schottky diode were obtained from the temperature dependent I-V measurements. The calculated barrier height of Schottky contacts to n-ZnO nanowire using the thermionic field emission model is in good agreement with the value obtained from X-ray photoelectron spectroscopy (XPS) measurements.
Keywords
II-VI semiconductors; Schottky barriers; Schottky diodes; X-ray photoelectron spectra; field emission; gold; nanowires; semiconductor quantum wires; semiconductor-metal boundaries; thermionic emission; wide band gap semiconductors; zinc compounds; Au-ZnO; I-V measurements; Schottky contacts; Schottky diodes; X-ray photoelectron spectroscopy; XPS; barrier height; nanowire Schottky diode; thermionic field emission model; Electric variables measurement; Gold; Nanoscale devices; Ohmic contacts; Schottky barriers; Schottky diodes; Temperature dependence; Temperature measurement; Thermionic emission; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424950
Filename
5424950
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