Operation of high speed switching systems based on bipolar transistors in nuclear radiation environments

Author

Soliman, Fouad A S ; Montasser, K. ; Kamh, S.A. ; Abdel-Maksood, A.M.

Author_Institution

Nucl. Mater. Authority, Cairo, Egypt

fYear

1998

fDate

6/20/1905 12:00:00 AM

Firstpage

145

Lastpage

148

Abstract

Operation of high speed switching system based on bipolar transistors in nuclear radiation environment was investigated either theoretically or experimentally. The switching equations of the active device and circuit were solved, where transient switching time parameters were computed. The study was extended to include the effects of different nuclear radiation types (neutrons, protons, electrons and gamma) on the devices, as well as their corresponding effects on the switching system behaviour

Keywords

bipolar transistor switches; electron beam effects; gamma-ray effects; neutron effects; power semiconductor switches; proton effects; radiation hardening (electronics); active device; bipolar transistor based; electron effects; forward current gain factor; gamma ray effects; high speed switching systems; neutron effects; nuclear radiation environment operation; proton effects; switching equations; transient switching time parameters; Bipolar transistors; Electrons; Equations; Failure analysis; Neutrons; Performance analysis; Protons; Switches; Switching circuits; Switching systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 1998. ICM '98. Proceedings of the Tenth International Conference on

Conference_Location

Monastir

Print_ISBN

0-7803-4969-5

Type

conf

DOI

10.1109/ICM.1998.825589

Filename

825589