Design analysis of thin-body silicide source/drain devices

Author

Kedzierski, J. ; Meikei Ieong ; Peiqi Xuan ; Bokor, J. ; Tsu-Jae King ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

2001

Firstpage

21

Lastpage

22

Abstract

The use of complementary low-barrier silicides is investigated for reducing the series resistance of thin-body silicon-on-insulator (SOI) devices. Two different thin-body device types are simulated, one in which the source/drain regions are formed by the silicide without doping, and another in which the silicide source/drains are terminated by a doped extension region.

Keywords

MOSFET; elemental semiconductors; semiconductor device models; semiconductor doping; silicon; silicon compounds; silicon-on-insulator; NMOS; PMOS; SOI devices; Si-SiO/sub 2/; complementary low-barrier silicides; design analysis; doped extension region; doping; series resistance; silicide; silicide source/drains; source/drain regions; thin-body silicide source/drain devices; thin-body silicon-on-insulator devices; Contact resistance; Doping; Electric resistance; Immune system; MOS devices; Schottky barriers; Silicides; Silicon devices; Silicon on insulator technology; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957965

Filename

957965