DocumentCode
1668271
Title
Femtosecond time-domain experimental characterization of ballistic transport in semiconducting nanostructures
Author
Sobolewski, Roman
Author_Institution
Depts. of Electr. & Comput. Eng. & Phys. & Astron., Univ. of Rochester, Rochester, NY, USA
fYear
2010
Firstpage
54
Lastpage
55
Abstract
We present sub-picosecond time-domain (THz bandwidth) characterization of novel ballistic transport electronic devices operated at room temperature, using a photoconductive switch for picosecond electrical pulse excitation and a femtosecond temporal resolution electro-optic sampling technique.
Keywords
ballistic transport; electro-optical devices; nanophotonics; photoconducting switches; ballistic transport; electro-optic sampling; femtosecond temporal resolution; femtosecond time-domain; photoconductive switch; picosecond electrical pulse excitation; semiconducting nanostructures; temperature 293 K to 298 K; Ballistic transport; Bandwidth; Electrooptic deflectors; Electrooptic modulators; Electrooptical waveguides; Optical switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2010 IEEE
Conference_Location
Playa del Carmen
Print_ISBN
978-1-4244-3730-6
Electronic_ISBN
978-1-4244-3731-3
Type
conf
DOI
10.1109/PHOSST.2010.5553708
Filename
5553708
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