Title :
Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate
Author :
Li, Guoqiang ; Shih, Shao-Ju
Author_Institution :
Dept. of Mater., Univ. of Oxford, Oxford, UK
Abstract :
GaN and related group III nitrides have been attracting enormous attention due to their successful applications in light-emitting diodes (LEDs), laser diodes (LDs), field effect transistors (FETs), photo-detectors (PDs), high power devices, etc. This work reports on the epitaxial growth of high quality m-plane GaN films on LaAlO3 (001) substrates by pulsed laser deposition. In situ reflection high-energy electron diffraction (RHEED) is used to monitor the growth condition during the whole course. X-ray diffraction rocking curves are used to determine crystallinity of as-grown GaN films and atomic force microscopy are utilized for surface morphology. The interface between GaN films and the substrates as well as the films´ microstructure are characterized by transmission electron microscopy.
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium compounds; pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; surface morphology; transmission electron microscopy; wide band gap semiconductors; GaN; LaAlO3; LaAlO3 (001) substrates; atomic force microscopy; crystallinity; epitaxial growth; growth condition; high quality m-plane GaN films; in situ reflection high-energy electron diffraction; microstructure; pulsed laser deposition; surface morphology; transmission electron microscopy; Atomic force microscopy; Electrons; Epitaxial growth; FETs; Gallium nitride; Light emitting diodes; Optical films; Pulsed laser deposition; Substrates; X-ray diffraction;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424954
