Title :
Metal routing induced burn out in GGNMOS ESD protection for low-power DRAM application
Author :
Minchen Chang ; Tseng-Fu Lu ; Wei-Chih Wang ; Fan-Wen Liu ; Jao-Hsiu Rao ; Wei-Ming Liao ; Chia-Ming Yang ; Jeng-Ping Lin
Author_Institution :
Device Eng. Dept., Nanya Technol. Corp., New Taipei, Taiwan
Abstract :
With high I/O numbers in low-power DRAM technology, ESD design is limited by on-chip metal routing. An unusual burn out pattern in GGNMOS is found. Failure is driven by metal induced joule heating. Metal routing restriction in GGNMOS is discussed and design guidance is set for low-power DRAM design.
Keywords :
DRAM chips; electrostatic discharge; low-power electronics; GGNMOS ESD protection; I/O numbers; joule heating; low-power DRAM; on-chip metal routing; Electrostatic discharges; Junctions; Metals; Routing; Surge protection; Surges; Transistors;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
