Title :
Lateral field emitter with thin-film Au emissive layer
Author :
Gorecka-Drzazga, A. ; Dziuban, J.A. ; Gorol, M.
Author_Institution :
Fac. of Microsystem Electron. & Photonics, Wroclaw Univ. of Technol., Poland
Abstract :
Lateral field emitters have been investigated for years as an alternative source of free electrons. Lateral construction seems to be easier from fabrication point of view, but the micrometer size cathode-anode/gate distance depends mainly on nano-lithographic procedures. In this work we have shown silicon/silicon dioxide/gold lateral emitters, made by controlled under etching of sandwich layer, possessing surprising good emissive properties. Turn-on voltage was of about 6 V in vacuum and 8 V in an air, the threshold field of 0.25 V/μm and the maximal emission current of about 5 μA for 15 V.
Keywords :
MIS structures; anodes; cathodes; elemental semiconductors; etching; field emitter arrays; gold; metallic thin films; nanolithography; semiconductor thin films; silicon; silicon compounds; 15 V; 5 muA; 6 V; 8 V; Si-SiO2-Au; anodes; cathodes; emission current; lateral field emitter; nanolithography; sandwich layer etching; thin film emissive layer; threshold field; turn-on voltage; Chromium; Etching; Fabrication; Gold; Photonics; Plasma measurements; Silicon compounds; Threshold voltage; Transistors; Ultrafast electronics;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619559
