DocumentCode :
166838
Title :
Advanced Wunsch-Bell based application for automotive pulse robustness sizing
Author :
Magrini, F. ; Mayerhofer, M.
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
fYear :
2014
fDate :
7-12 Sept. 2014
Firstpage :
1
Lastpage :
8
Abstract :
In this paper we present an advanced methodology based on the Wunsch-Bell model. We demonstrate the advantage gained by combining transistor electrical SOA characteristics with the related failure current density decay over pulse time. The experimental results enable the prediction of the transistor robustness against long-duration disturbances in given applications.
Keywords :
MOSFET; automotive electronics; current density; failure analysis; semiconductor device reliability; advanced Wunsch-Bell application; automotive pulse robustness sizing; failure current density decay over pulse time; long-duration disturbance; safe operating area; transistor electrical SOA characteristic; transistor robustness prediction; Clamps; Current density; Density measurement; Electrostatic discharges; Logic gates; Semiconductor optical amplifiers; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
ISSN :
0739-5159
Type :
conf
Filename :
6968857
Link To Document :
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