The effects of high work function electrodes on the electrical properties of solution processed ZnO thin film transistor

In this work, the effects of electrodes on the performance of sol-gel fabricated ZnO thin film transistor were investigated. The metal with high work function such as Pt was employed as the source-drain electrodes. Compared to the device with Al electrodes as reported before, the transistor fabricated with Pt electrode exhibited lower saturation voltage and current, which was due to the Schottky contact between the Pt electrode and the ZnO film. The result has also been proved by the current-voltage (IV) measurement of the Pt-ZnO-Pt structure. For the Schottky contact between the electrodes and the channel layer, the current saturated when the source was depleted. This kind of device reduced the operation voltage and power dissipations effectively.