Title :
Exploitation of volume inversion in optimal DG MOSFET design
Author :
Ge, L. ; Fossum, J.G.
Author_Institution :
Univ. of Florida, Gainesville, FL, USA
Abstract :
Based on the variational approach, an analytical quantum-effects model for symmetrical DG MOSFETs of arbitrary Si-film thickness has been developed and used to give a design criterion for the exploitation of volume inversion for enhanced carrier mobility. Reference to Monte Carlo simulations of the carrier transport supported the modeling. The work focused on symmetrical DG devices, but the insight gained can be useful for near-symmetrical devices as well.
Keywords :
MOSFET; Monte Carlo methods; carrier mobility; elemental semiconductors; quantum interference phenomena; semiconductor device models; silicon; variational techniques; Monte Carlo simulations; Si; Si-film thickness; analytical quantum-effects model; design criterion; double-gate; enhanced carrier mobility; near-symmetrical devices; optimal DG MOSFET design; symmetrical DG MOSFETs; symmetrical DG devices; variational approach; volume inversion; Effective mass; Eigenvalues and eigenfunctions; MOSFET circuits; Optical films; Predictive models; Quantization; Scalability; Schrodinger equation; Semiconductor films; Semiconductor process modeling;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957969
