DocumentCode :
1668500
Title :
Field emission enhancement of amorphous carbon nitride films by the addition of argon to the reactive gas of nitrogen
Author :
Li, Junjie ; Mimura, Hidenori ; Neo, Yoichiro ; Gu, Changzhi ; Li, Haijun ; Chen, Shuxia
Author_Institution :
Res. Inst. of Electron., Shizuoka Univ., Hamamatsu, Japan
fYear :
2005
Firstpage :
223
Lastpage :
224
Abstract :
In this paper, the addition of argon to the reactive gas of nitrogen caused the increase of the content and size of sp2-bonded clusters. This caused the domination of the local connectivity and lowered the surface tunnel barrier. Because of this, the field emission of amorphous carbon nitride (a-CNx) films was effectively enhanced.
Keywords :
amorphous state; carbon compounds; electron field emission; thin films; CNx; Si; amorphous carbon nanotube films; argon; field emission; nitrogen; reactive gas; sp2-bonded clusters; surface tunnel barrier; Amorphous materials; Argon; Carbon dioxide; Diamond-like carbon; Electron emission; Nitrogen; Optical films; Semiconductor films; Spectroscopy; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
Type :
conf
DOI :
10.1109/IVNC.2005.1619566
Filename :
1619566
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1668500
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