DocumentCode :
1668505
Title :
Electrical and photoelectrical properties of p-SWNT/n-ZnO heterojunction structure
Author :
Park, Min Ji ; Chang, Young Wook ; Kang, Bong Keun ; Son, Min-Soo ; Lee, Jae Sang ; Lee, Sang Yeol ; Yoo, Kyung-Hwa
Author_Institution :
Dept. of Phys., Yonsei Univ., Seoul, South Korea
fYear :
2010
Firstpage :
1195
Lastpage :
1196
Abstract :
We have fabricated p-SWNT/n-ZnO heterojunctions and investigated their electrical and photoelectrical properties. The I-V curves measured across junctions exhibited diode rectifying behaviors, while the I-V curves measured for individual SWNT or ZnO were linear. In addition, we also investigated photoresponsive behaviors for these heterojunctions.
Keywords :
II-VI semiconductors; carbon nanotubes; elemental semiconductors; p-n heterojunctions; photoelectricity; rectification; semiconductor nanotubes; wide band gap semiconductors; zinc compounds; C-ZnO; I-V curves; diode rectifying behaviors; heterojunction structure; p-n junctions; photoelectrical properties; photoresponsive behaviors; Electrodes; Heterojunctions; Lighting; Optical films; P-n junctions; Sputtering; Substrates; Transistors; Voltage; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424960
Filename :
5424960
Link To Document :
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