• DocumentCode
    1668514
  • Title

    Gas cluster ion beam processing of SOI surfaces for improved gate oxide integrity

  • Author

    Allen, L.P. ; Hautala, J. ; Santeufemio, C. ; Brooks, W. ; Fenner, D.B. ; Lucking, T. ; Liu, M.

  • Author_Institution
    Epion Corp., Billerica, MA, USA
  • fYear
    2001
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    In this study, SOI substrates were delivered to Honeywell SSEC in order to assess the effectiveness of a gas cluster ion beam smoothing process on the gate oxide integrity (GOI) of silicon-on-insulator (SOI) wafers using a fast turn around GOI test process.
  • Keywords
    SIMOX; elemental semiconductors; silicon; sputter etching; substrates; surface topography; surface treatment; GOI test process; SIMOX; SOI substrates; SOI surfaces; Si-SiO/sub 2/; gas cluster ion beam processing; gate oxide integrity; ion beam smoothing process; silicon-on-insulator; Atomic force microscopy; Capacitors; Contacts; Dielectric substrates; Ion beams; Rough surfaces; Smoothing methods; Surface roughness; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2001 IEEE International
  • Conference_Location
    Durango, CO, USA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-6739-1
  • Type

    conf

  • DOI
    10.1109/SOIC.2001.957972
  • Filename
    957972
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1668514