Field emission from heavily phosphorus-doped homoepitaxial diamond

Author

Yamada, T. ; Kato, H. ; Takeuchi, D. ; Shikata, S. ; Nebel, C.E. ; Yamaguchi, H. ; Kudo, Y. ; Okano, K.

Author_Institution

Diamond Res. Center, AIST, Ibaraki, Japan

fYear

2005

Abstract

Field emission characteristics of heavily phosphorus doped homoepitaxial diamond (111) after H-plasma treatment and wet chemical oxidization are discussed. Although H-terminated surface has a negative electron affinity (NEA), higher threshold voltage have to be applied compared to wet chemical oxidized surface with a positive electron affinity (PEA). From field emission results and surface characterizations, we conclude that a surface electric field is present which prevents electrons in the bulk of diamond to reach the vacuum level.

Keywords

diamond; electron affinity; electron field emission; elemental semiconductors; heavily doped semiconductors; hydrogen; oxidation; phosphorus; plasma materials processing; semiconductor epitaxial layers; surface conductivity; C:P,H; H-plasma treatment; field emission; heavily phosphorus doped homoepitaxial diamond (111) surface; negative electron affinity; positive electron affinity; surface electric field; wet chemical oxidization; Anodes; Cathodes; Chemical vapor deposition; Conducting materials; Electron emission; Plasma temperature; Substrates; Surface treatment; Thermal conductivity; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619567

Filename

1619567