DocumentCode :
1668535
Title :
Layout Considerations and Thermal Analysis of a 1.8 MHz Resonant VRM
Author :
Spiazzi, G. ; Rossetto, L. ; Mattavelli, P. ; Cova, P. ; Delmonte, N.
Author_Institution :
Univ. of Padova, Padova
fYear :
2007
Firstpage :
1993
Lastpage :
2000
Abstract :
Practical realization of modern high current and high switching frequency converters (with strong skin and proximity effects) requires a good control on layout-dependent parasitic components and on the power losses (thermal management), in order to meet the goal of high efficiency and reliability. In this paper, the physical realization of a VRM rated at 1.3 V - 50 A and switching at 1.8 MHz is analyzed in detail and discussed. Three prototypes, with same layout but different PCB structures and SR MOSFETs, have been tested. Moreover, an accurate thermal model was developed and experimentally validated in order to predict the maximum temperature of critical components.
Keywords :
printed circuit layout; thermal analysis; voltage regulators; PCB structures; SR MOSFET; critical components; current 50 A; frequency 1.8 MHz; layout considerations; maximum temperature; resonant VRM; thermal analysis; voltage 1.3 V; voltage regulator module; Energy management; MOSFETs; Prototypes; Proximity effect; Resonance; Skin; Strontium; Switching converters; Switching frequency; Thermal management;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE
Conference_Location :
New Orleans, LA
ISSN :
0197-2618
Print_ISBN :
978-1-4244-1259-4
Electronic_ISBN :
0197-2618
Type :
conf
DOI :
10.1109/07IAS.2007.302
Filename :
4348051
Link To Document :
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