Layout Considerations and Thermal Analysis of a 1.8 MHz Resonant VRM

Author

Spiazzi, G. ; Rossetto, L. ; Mattavelli, P. ; Cova, P. ; Delmonte, N.

Author_Institution

Univ. of Padova, Padova

fYear

2007

Firstpage

1993

Lastpage

2000

Abstract

Practical realization of modern high current and high switching frequency converters (with strong skin and proximity effects) requires a good control on layout-dependent parasitic components and on the power losses (thermal management), in order to meet the goal of high efficiency and reliability. In this paper, the physical realization of a VRM rated at 1.3 V - 50 A and switching at 1.8 MHz is analyzed in detail and discussed. Three prototypes, with same layout but different PCB structures and SR MOSFETs, have been tested. Moreover, an accurate thermal model was developed and experimentally validated in order to predict the maximum temperature of critical components.

Keywords

printed circuit layout; thermal analysis; voltage regulators; PCB structures; SR MOSFET; critical components; current 50 A; frequency 1.8 MHz; layout considerations; maximum temperature; resonant VRM; thermal analysis; voltage 1.3 V; voltage regulator module; Energy management; MOSFETs; Prototypes; Proximity effect; Resonance; Skin; Strontium; Switching converters; Switching frequency; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2007. 42nd IAS Annual Meeting. Conference Record of the 2007 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

978-1-4244-1259-4

Electronic_ISBN

0197-2618

Type

conf

DOI

10.1109/07IAS.2007.302

Filename

4348051