Title :
Characterization of SOI wafers by temporal decay measurement of condensate luminescence
Author :
Ibuka, S. ; Tajima, M.
Abstract :
In this study, we focused on the temporal decay of the luminescence due to highly dense carriers in the superficial SOI film. We measured the dependence of the decay on excitation intensity and time-resolved spectra, and found that the decay under low excitation condition depended on the surface/interface condition and method of fabrication. These results allow us to view the present method as a powerful tool for characterization of SOI wafers.
Keywords :
elemental semiconductors; interface structure; photoluminescence; silicon; silicon compounds; silicon-on-insulator; time resolved spectra; SOI wafers; Si-SiO/sub 2/; condensate luminescence; excitation intensity; highly dense carriers; low excitation condition; surface/interface condition; temporal decay; time-resolved spectra; Extraterrestrial measurements; Luminescence; Photoluminescence; Plasma temperature; Pulse measurements; Semiconductor films; Silicon on insulator technology; Spectral shape; Thin film devices; Wafer bonding;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957973
