Title :
Novel 3D back-to-back diodes ESD protection
Author :
Courivaud, B. ; Nolhier, N. ; Ferru, G. ; Bafleur, M. ; Caignet, F.
Author_Institution :
LAAS, Toulouse, France
Abstract :
A 3D technology is used to design ESD protection devices. Based on back-to-back diodes, these devices are dedicated to first stage, external ESD protection. The main feature consists in using deep trenches, usually employed to build capacitors, to design 3D diodes. Specific trench configuration improves cumulative ESD stress robustness.
Keywords :
capacitors; electrostatic discharge; semiconductor diodes; 3D diode; 3D technology; ESD protection device; back-to-back diode; capacitor; cumulative ESD stress robustness improvement; deep trench; electrostatic discharge; specific trench configuration; Anodes; Cathodes; Electrostatic discharges; Optimization; Robustness; Stress;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
Conference_Location :
Tucson, AZ
