• DocumentCode
    166856
  • Title

    Novel 3D back-to-back diodes ESD protection

  • Author

    Courivaud, B. ; Nolhier, N. ; Ferru, G. ; Bafleur, M. ; Caignet, F.

  • Author_Institution
    LAAS, Toulouse, France
  • fYear
    2014
  • fDate
    7-12 Sept. 2014
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    A 3D technology is used to design ESD protection devices. Based on back-to-back diodes, these devices are dedicated to first stage, external ESD protection. The main feature consists in using deep trenches, usually employed to build capacitors, to design 3D diodes. Specific trench configuration improves cumulative ESD stress robustness.
  • Keywords
    capacitors; electrostatic discharge; semiconductor diodes; 3D diode; 3D technology; ESD protection device; back-to-back diode; capacitor; cumulative ESD stress robustness improvement; deep trench; electrostatic discharge; specific trench configuration; Anodes; Cathodes; Electrostatic discharges; Optimization; Robustness; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2014 36th
  • Conference_Location
    Tucson, AZ
  • ISSN
    0739-5159
  • Type

    conf

  • Filename
    6968866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=166856