Title :
FTIR dosimetry mapping of as-implanted SIMOX wafers
Author :
Yakovlev, V.A. ; Rosenthal, P.A. ; Anc, M.J.
Author_Institution :
On-Line Products, MKS Instruments Inc, East Hartford, CT, USA
Abstract :
This report summarizes recent advances in the application of the On-Line´s FTIR FilmExpert/sup TM/ metrology tool for the characterization and uniformity control of SIMOX wafers. The SOI buried layer needs to be uniform within +/5%. This translates to +/- 25 A for 500 A SOI films and respectively less for 200 A SOI films over the large diameter wafers. The criterion is related to the requirement for the uniformity of threshold voltage and corresponding doping levels. The advanced FTIR measurements demonstrated the capability to perform fast mapping of oxygen implant dose with high precision (better than 0.5%) and excellent spatial resolution on as-implanted wafers. i.e. before time-consuming annealing which,finalizes SIMOX fabrication. The results illustrate the potential of the FilmExpert/sup TM/ as a process control tool for optimizing low-dose and ultra low-dose SIMOX manufacturing.
Keywords :
Fourier transform spectra; SIMOX; buried layers; doping profiles; infrared spectra; ion implantation; semiconductor device measurement; semiconductor doping; 200 A; 500 A; FTIR dosimetry mapping; SOI buried layer; SOI films; annealing; as-implanted SIMOX wafers; doping levels; large diameter wafers; low-dose SIMOX manufacturing; oxygen implant dose; spatial resolution; threshold voltage uniformity; ultra low-dose SIMOX manufacturing; Annealing; Doping; Dosimetry; Fabrication; Implants; Metrology; Performance evaluation; Process control; Spatial resolution; Threshold voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957974
