• DocumentCode
    1668630
  • Title

    Deposition and characterization of LaS (lanthanum monosulfide) thin films grown by pulsed laser ablation

  • Author

    Fairchild, S. ; Campbell, A. ; Cahay, M. ; Semet, V. ; Binh, Vu Thien ; Wu, X. ; Lockwood, D.J.

  • Author_Institution
    Air Force Res. Lab., Wright-Patterson AFB, OH, USA
  • fYear
    2005
  • Firstpage
    233
  • Lastpage
    234
  • Abstract
    This work focuses on improving the crystalline property of the LaS thin films by improving the deposition conditions. Many factors can affect the quality of laser deposited films, including vacuum level, laser energy, laser repetition rate, substrate temperature, target to substrate distance, background gas pressure, and substrate bias.
  • Keywords
    lanthanum compounds; pulsed laser deposition; thin films; LaS; background gas pressure; crystalline property; laser energy; laser repetition rate; pulsed laser ablation; substrate bias; substrate temperature; target-substrate distance; thin films; vacuum level; Amorphous materials; Crystallization; Gas lasers; Lanthanum; Laser ablation; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
  • Print_ISBN
    0-7803-8397-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2005.1619571
  • Filename
    1619571