DocumentCode
1668630
Title
Deposition and characterization of LaS (lanthanum monosulfide) thin films grown by pulsed laser ablation
Author
Fairchild, S. ; Campbell, A. ; Cahay, M. ; Semet, V. ; Binh, Vu Thien ; Wu, X. ; Lockwood, D.J.
Author_Institution
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fYear
2005
Firstpage
233
Lastpage
234
Abstract
This work focuses on improving the crystalline property of the LaS thin films by improving the deposition conditions. Many factors can affect the quality of laser deposited films, including vacuum level, laser energy, laser repetition rate, substrate temperature, target to substrate distance, background gas pressure, and substrate bias.
Keywords
lanthanum compounds; pulsed laser deposition; thin films; LaS; background gas pressure; crystalline property; laser energy; laser repetition rate; pulsed laser ablation; substrate bias; substrate temperature; target-substrate distance; thin films; vacuum level; Amorphous materials; Crystallization; Gas lasers; Lanthanum; Laser ablation; Optical pulses; Pulsed laser deposition; Sputtering; Substrates; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN
0-7803-8397-4
Type
conf
DOI
10.1109/IVNC.2005.1619571
Filename
1619571
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