DocumentCode
1668647
Title
Enhanced performance of ZnO nanocomposite transistor by external mechanical force
Author
Choi, Ji-Hyuk ; Moon, Kyung-Ju ; Jeon, Joohee ; Kar, Jyoti Prakash ; Khang, Dahl-Young ; Lee, Tae Il ; Myoung, Jae-min
fYear
2010
Firstpage
1183
Lastpage
1184
Abstract
A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-casted device does not show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa exhibits a significantly enhanced performance. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and broadens their use in a variety of applications.
Keywords
II-VI semiconductors; field effect transistors; filled polymers; nanocomposites; nanoelectronics; nanofabrication; nanowires; polymers; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; ZnO; contact resistance; drop casting; electrical path; electrical properties; external mechanical force; insulating polymer matrix; nanocomposite FETs; nanocomposite field effect transistor; nanowires; polymer nanocomposite; polymer solution; pressure 300 kPa; pressure 600 kPa; Casting; Electrodes; Fabrication; Image coding; Mechanical factors; Nanoscale devices; Nanowires; Polymers; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424965
Filename
5424965
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