DocumentCode :
1668647
Title :
Enhanced performance of ZnO nanocomposite transistor by external mechanical force
Author :
Choi, Ji-Hyuk ; Moon, Kyung-Ju ; Jeon, Joohee ; Kar, Jyoti Prakash ; Khang, Dahl-Young ; Lee, Tae Il ; Myoung, Jae-min
fYear :
2010
Firstpage :
1183
Lastpage :
1184
Abstract :
A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-casted device does not show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa exhibits a significantly enhanced performance. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and broadens their use in a variety of applications.
Keywords :
II-VI semiconductors; field effect transistors; filled polymers; nanocomposites; nanoelectronics; nanofabrication; nanowires; polymers; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; ZnO; contact resistance; drop casting; electrical path; electrical properties; external mechanical force; insulating polymer matrix; nanocomposite FETs; nanocomposite field effect transistor; nanowires; polymer nanocomposite; polymer solution; pressure 300 kPa; pressure 600 kPa; Casting; Electrodes; Fabrication; Image coding; Mechanical factors; Nanoscale devices; Nanowires; Polymers; Temperature; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424965
Filename :
5424965
Link To Document :
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