Title :
Statistical design of the four-MOSFET structure
Author :
Tarun, T.B. ; Kuntman, H. Hakan ; Ismail, Mohammed
Author_Institution :
Dept. of Electron. Eng., Istanbul Tech. Univ., Turkey
fDate :
6/20/1905 12:00:00 AM
Abstract :
The statistical design of the four-MOSFET structure is presented in this paper. The quantitative measure of the effect of mismatch between the four transistors on nonlinearity and offset current is provided through the contours. Yield enhancement and optimization of transistor W and L values are demonstrated. (Experimental results will be provided at the conference)
Keywords :
MOSFET circuits; L-value; W-value; four-MOSFET structure; mismatch; nonlinearity; offset current; optimization; statistical design; yield enhancement; CMOS analog integrated circuits; Current measurement; Design engineering; Equations; Linearity; Low voltage; MOSFET circuits; Resistors; Robustness; Very large scale integration;
Conference_Titel :
Microelectronics, 1998. ICM '98. Proceedings of the Tenth International Conference on
Conference_Location :
Monastir
Print_ISBN :
0-7803-4969-5
DOI :
10.1109/ICM.1998.825606
