Phenomenalistic reconsideration of Hooge parameter in buried-channel metal-oxide-semiconductor field-effect transistors

Physical origins of 1/f noise are still controversial and not well understood because it is anticipated that the carrier-density fluctuation and the mobility fluctuation may be correlated in some cases. The difficulty of consideration of 1/f noise characteristics also results from the fact that the Hooge parameter varies widely among various devices. This paper describes the low-frequency noise characteristics of various buried-channel (BC) MOSFETs. Significant aspects of the drain current noise seen with various device structures are discussed and the meaning of the Hooge parameter is reconsidered.