Title :
Threshold voltage fluctuation analysis in dynamic threshold MOSFET based on charge-sharing
Author_Institution :
Dept. of Comput. Enginecring, Hiroshima City Univ., Japan
Abstract :
Threshold voltage (V/sub th/) fluctuation in Dynamic Threshold MOSFET (DTMOS) is analyzed based on a charge-sharing model. It has been revealed that the gate depiction layer width in DTMOS devices is smaller than that in body-tied partially-depleted SOI MOSFETs (PDSOI) or bulk MOSFET in normal conditions, leading to smaller V/sub th/ fluctuation in DTMOS (/spl sigma//sub Vth//sup DT/) due to impurity number fluctuation in the gate depiction layer. Vth sensitivity on both impurity concentration (N/sub a/) and gate oxide thickness (T/sub ox/) is also reduced in DTMOS.
Keywords :
MOSFET; semiconductor device models; semiconductor device noise; charge-sharing; dynamic threshold MOSFET; gate depiction layer width; gate oxide thickness; impurity number fluctuation; threshold voltage fluctuation analysis; Channel bank filters; Electron devices; Electronic mail; Fluctuations; Impurities; Information analysis; Low voltage; MOSFET circuits; Threshold voltage; Very large scale integration;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957981
