Threshold voltage fluctuation analysis in dynamic threshold MOSFET based on charge-sharing

Threshold voltage (V/sub th/) fluctuation in Dynamic Threshold MOSFET (DTMOS) is analyzed based on a charge-sharing model. It has been revealed that the gate depiction layer width in DTMOS devices is smaller than that in body-tied partially-depleted SOI MOSFETs (PDSOI) or bulk MOSFET in normal conditions, leading to smaller V/sub th/ fluctuation in DTMOS (/spl sigma//sub Vth//sup DT/) due to impurity number fluctuation in the gate depiction layer. Vth sensitivity on both impurity concentration (N/sub a/) and gate oxide thickness (T/sub ox/) is also reduced in DTMOS.