DocumentCode :
1668743
Title :
Short circuit III in high power IGBTs
Author :
Lutz, Josef ; Döbler, Ralf ; Mari, Jorge ; Menzel, Matthias
Author_Institution :
Power Electron. & EMC, Chemnitz Univ. of Technol., Chemnitz, Germany
fYear :
2009
Firstpage :
1
Lastpage :
8
Abstract :
Short circuit III is the occurrence of a short circuit across the load during the conducting mode of the freewheeling diode. This has the same importance for the application of high power IGBTs as the known short circuit II. Different to short circuit II, the IGBT of the same module is now turned-on starting from very low voltage across its terminals and showing a forward recovery voltage before saturating. After that a dynamic short circuit peak current occurs similar to the one seen in SC II. During the short circuit, a reverse recovery process occurs at the freewheeling diode with a very high voltage slope.
Keywords :
diodes; insulated gate bipolar transistors; short-circuit currents; dynamic short circuit peak current; forward recovery voltage; freewheeling diode conducting mode; high power IGBT; reverse recovery process; short circuit III; Circuit testing; Commutation; Diodes; Inductance; Insulated gate bipolar transistors; Motor drives; Pulse width modulation inverters; Switches; Switching circuits; Voltage; Free wheel diode (FWD); IGBT; Reverse recovery; Robustness; Traction application;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications, 2009. EPE '09. 13th European Conference on
Conference_Location :
Barcelona
Print_ISBN :
978-1-4244-4432-8
Electronic_ISBN :
978-90-75815-13-9
Type :
conf
Filename :
5279057
Link To Document :
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