Author :
Witvrouw, A. ; Mehta, A. ; Verbist, A. ; Du Bois, B. ; Van Aerde, S. ; Ramos-Martos, J. ; Ceballos, J. ; Ragel, A. ; Mora, J.M. ; Lagos, M.A. ; Arias, A. ; Hinoiosa, J.M. ; Spengler, J. ; Leinenbach, C. ; Fuchs, T. ; Kronmüller, S.
Abstract :
Integrated 10 μm thick poly-SiGe gyroscopes are processed on top of an 8" standard 0.35 μm CMOS wafer with 5 metal levels by using an advanced plasma-enhanced chemical vapor deposition multi-layer technology. The gyroscopes are free-moving with Q-factors for the drive mode up to 10000 at the pressure of 0.8 mTorr while the CMOS chip is fully functional.
Keywords :
CMOS integrated circuits; Ge-Si alloys; gyroscopes; micromechanical devices; multilayers; plasma CVD; 0.35 micron; 10 micron; CMOS IC; Ge-Si; MEMS gyroscopes; Q-factors; multi-layer technology; plasma-enhanced chemical vapor deposition; poly-SiGe gyroscopes; CMOS process; CMOS technology; Electronics packaging; Etching; Gyroscopes; Integrated circuit interconnections; Microelectromechanical devices; Micromechanical devices; Monolithic integrated circuits; Plasma temperature;
