Title :
Tuning exchange bias effects by ion-beam bombardment in NiFe/NiO bilayers
Author :
Lin, Ko-Wei ; Huang, H.-R. ; Hsu, H.F. ; Yang, Y.-C. ; Guo, J.-Y. ; Suzuki, T. ; van Lierop, J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chung Hsing Univ., Taichung, Taiwan
Abstract :
We have studied the correlation between the ion-beam bombardment and exchange bias effects in NiFe/NiO bilayers. The dependence of the exchange bias field, Hex, with increasing VEH suggests strongly that the Ar ion-beam bombardment process may increase the spin misalignment in FM/AF interfaces (resulting in a decrease of Hex) or create uncompensated NiO spins (shown by a shift from negative to positive Hex), depending on the energy used. The polarity switch from -Hex to +Hex occurred with increasing ion-beam bombardment time (tbom.> 5 mins).
Keywords :
argon; exchange interactions (electron); ion beam effects; multilayers; nickel compounds; Ar; Ar ion beam bombardment; FM/AF interfaces; NiFe-NiO; bilayers; exchange bias effects; polarity switch; spin misalignment; uncompensated NiO spins; Antiferromagnetic materials; Argon; Astronomy; Hysteresis; Lattices; Materials science and technology; Physics; Space technology; Switches; X-ray scattering;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424970
