DocumentCode
1668901
Title
High resistive ELTRAN/sup (R)/ SOI-Epi/sup TM/ wafers for RF application
Author
Sato, N. ; Nakayama, J. ; Ohmi, K. ; Yonehara, T.
Author_Institution
ELTRAN Bus. Center, Canon Inc., Kanagawa, Japan
fYear
2001
Firstpage
67
Lastpage
68
Abstract
We report on highly resistive SOI wafers formed by epitaxial layer transfer (ELTRAN) technology focusing on the final resistivity after formation. The lowering of resistivity in the Si wafer of 200 mm ELTRAN SOI was successfully suppressed by controlling the cleanroom ambient and the location of the bonded interface.
Keywords
electrical resistivity; silicon-on-insulator; 200 mm; Si; bonded interface location; cleanroom ambient conditions; epitaxial layer transfer technology; high resistive ELTRAN SOI-Epi wafers; highly resistive SOI wafers; resistivity lowering suppression; Air cleaners; Boron; Conductivity; Contamination; Electrical resistance measurement; Heat treatment; Impurities; Pollution measurement; Radio frequency; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2001 IEEE International
Conference_Location
Durango, CO, USA
ISSN
1078-621X
Print_ISBN
0-7803-6739-1
Type
conf
DOI
10.1109/SOIC.2001.957988
Filename
957988
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