Title :
High resistive ELTRAN/sup (R)/ SOI-Epi/sup TM/ wafers for RF application
Author :
Sato, N. ; Nakayama, J. ; Ohmi, K. ; Yonehara, T.
Author_Institution :
ELTRAN Bus. Center, Canon Inc., Kanagawa, Japan
Abstract :
We report on highly resistive SOI wafers formed by epitaxial layer transfer (ELTRAN) technology focusing on the final resistivity after formation. The lowering of resistivity in the Si wafer of 200 mm ELTRAN SOI was successfully suppressed by controlling the cleanroom ambient and the location of the bonded interface.
Keywords :
electrical resistivity; silicon-on-insulator; 200 mm; Si; bonded interface location; cleanroom ambient conditions; epitaxial layer transfer technology; high resistive ELTRAN SOI-Epi wafers; highly resistive SOI wafers; resistivity lowering suppression; Air cleaners; Boron; Conductivity; Contamination; Electrical resistance measurement; Heat treatment; Impurities; Pollution measurement; Radio frequency; Wafer bonding;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.957988
