Title :
Field electron emission from gated Si tip arrays with DLC apexes
Author :
She, J.C. ; Hao, H. ; Deng, S.Z. ; Chen, Jun ; Xu, N.S. ; Huq, S.E. ; Wang, L.
Author_Institution :
State Key Lab. of Optoelectronic Mater. & Technol., Zhongshan Univ., Guangzhou, China
Abstract :
We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) apexes. It was found that for a 40×40 gated Si tip array with DLC apexes, an emission current density up to 0.23 A/cm2 can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.
Keywords :
diamond-like carbon; electron field emission; elemental semiconductors; silicon; 200 V; 38 to 50 V; DLC apexes; Si-C; diamond-like carbon; emission current density; field electron emission; gated Si tip array; turn-on gate voltage; Current density; Diamond-like carbon; Electron emission; Laboratories; Organic materials; Scanning electron microscopy; Semiconductor thin films; Sputtering; Thin film devices; Voltage;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619581
