DocumentCode :
1668961
Title :
Fabrication of novel ZnS/ZnAl2S4 nanocomposite using a facile solvothermal route
Author :
Pilapong, Chalermchai ; Thongtem, Titipun ; Thongtem, Somchai
Author_Institution :
Dept. of Chem. Fac. of Sci., Chiang Mai Univ., Chiang Mai, Thailand
fYear :
2010
Firstpage :
517
Lastpage :
518
Abstract :
Novel ZnS/ZnAl2S4 nanocomposites were successfully synthesized via a surfactant-free solvothermal method using propylene glycol as a solvent. This method is mild, convenient, cheap and effective. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), and photoluminescene spectroscopy techniques were used to characterize the ZnS/ZnAl2S4 nanocomposites and the bare ZnS nanorods. The results show that the nanocomposites were built up from a zinc blend ZnS nanorod core and wurzite ZnAl2S4 shell. Due to the PL spectra, the presence of ZnAl2S4 shell on ZnS nanorod can dramatically change optical properties of the nanocomposites. In addition, the formation mechanism of the ZnS/ZnAl2S4 nanocomposites was also discussed.
Keywords :
II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; aluminium compounds; chalcogenide glasses; field emission electron microscopy; nanocomposites; nanofabrication; photoluminescence; scanning electron microscopy; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; zinc compounds; X-ray diffraction; ZnS-ZnAl2S4; energy dispersive X-ray spectroscopy; field emission scanning electron microscopy; nanocomposites; nanorods; optical properties; photoluminescene spectroscopy; surfactant-free solvothermal method; transmission electron microscopy; Anti-freeze; Electron emission; Fabrication; Nanocomposites; Scanning electron microscopy; Solvents; Spectroscopy; Transmission electron microscopy; X-ray diffraction; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424979
Filename :
5424979
Link To Document :
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