Title :
Field electron emission from silicon carbide nanowires prepared on stainless steel substrate
Author :
Xu, H.T. ; Deng, S.Z. ; Xu, N.S. ; Chen, Jun
Author_Institution :
State Key Lab. of Optoelectronic Mater. & Technol., Zhongshan Univ., Guangzhou, China
Abstract :
Silicon carbide (SiC) nanowires were grown directly on the flat stainless steel substrate by using a thermal evaporation method. SEM images show that the SiC nanowires have layered structure with different orientations and the average diameter is about 50 nm. Lower turn-on (3 MV/m) for electron emission were observed.
Keywords :
electron field emission; nanowires; scanning electron microscopy; silicon compounds; vacuum deposition; wide band gap semiconductors; SEM; SiC; field electron emission; scanning electron microscopy; silicon carbide nanowires; stainless steel substrate; thermal evaporation method; Boats; Current density; Electron emission; Nanowires; Powders; Scanning electron microscopy; Semiconductor films; Silicon carbide; Steel; Substrates;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International
Print_ISBN :
0-7803-8397-4
DOI :
10.1109/IVNC.2005.1619582
