A picosecond photodetector on SOI structures for 0.4 /spl mu/m band

Author

Ohsawa, J. ; Misaki, T. ; Ibaragi, T.

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

2001

Firstpage

75

Lastpage

76

Abstract

We describe the characteristics of a Schottky diode of Sm on p-Si, and then the photodetector characteristics including the dark and photo current and the temporal response to picosecond light pulses. Interdigital electrodes in the detecting area of about 50 /spl mu/m square showed a dark current of about 1 nA and a responsivity of 0.1 A/W at 488 nm wavelength. The response to picosecond light pulses at 395 nm exhibited an FWHM of about 50 ps at the bias of 10 V.

Keywords

Schottky diodes; dark conductivity; photoconductivity; photodetectors; samarium; semiconductor device measurement; silicon; silicon-on-insulator; ultraviolet detectors; 0.4 micron; 1 nA; 10 V; 395 nm; 488 nm; FWHM; SOI structures; Schottky diode; Si-Sm; dark current; interdigital electrodes; photo current; picosecond light pulse temporal response; picosecond photodetector; responsivity; Conductivity; Current measurement; Dark current; Electrodes; Optical interconnections; Optical pulse generation; Photodetectors; Pulse measurements; Samarium; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957992

Filename

957992