300 Mbps level converters for 0.5 V system LSIs using FD/PD-SOI technology

Author

Fuse, T. ; Tokumasu, M. ; Ohta, M. ; Fujii, H. ; Kawanaka, S. ; Kameyama, A.

Author_Institution

Comput. & Network Syst. Lab., Toshiba Corp., Kawasaki, Japan

fYear

2001

Firstpage

79

Lastpage

80

Abstract

The paper clarified the performance of dual-rail level converters suitable for 0.5V-operating LSIs, through experiments of FD/PD-SOI devices. The level converter using an 0.35/spl mu/m multi-Vt SOI CMOS device operated with 4-nsec in the 0.5V-to-1.2V conversion. In the level converter fabricated using the 0.25/spl mu/m PD-SOI CMOS process, it was shown that the dual-rail scheme allowed more marginal Vt-design. Furthermore, the fabricated device achieved the maximum data rate of 300Mbps in the 0.5V-to-1.5V conversion.

Keywords

CMOS integrated circuits; convertors; large scale integration; silicon-on-insulator; 0.25 micron; 0.35 micron; 0.5 to 1.5 V; 300 Mbit/s; 4 ns; CMOS device; FD/PD-SOI technology; LSIs; PD-SOI CMOS; Si-SiO/sub 2/; dual-rail level converters; level converters; maximum data rate; Analog circuits; Analog-digital conversion; CMOS process; CMOS technology; Computer networks; Frequency; Fuses; Large scale integration; Portable computers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2001 IEEE International

Conference_Location

Durango, CO, USA

ISSN

1078-621X

Print_ISBN

0-7803-6739-1

Type

conf

DOI

10.1109/SOIC.2001.957994

Filename

957994