DocumentCode
1669133
Title
The effect of quantum dot shape and position on electron confinement in dot-in-a-well structures
Author
Batenipour, N. ; Saghafi, K. ; Moravvej-Farshi, M.K.
Author_Institution
Dept. of Electr. Eng., Islamic Azad Univ., Tehran, Iran
fYear
2010
Firstpage
1153
Lastpage
1154
Abstract
In this paper we present results of our study on electron confinement in dot-in-a-well (DWELL) structures. The structures under investigation consist of an InAs quantum dot (QD) confined in an InGaAs quantum well (QW), which in turn buried in GaAs bulk. We examine DWELL structures of various quantum dot shapes embedded in the same quantum well and calculate their electronic structures. We perform our simulation using path integral Monte Carlo (PIMC) method with virial energy estimator. Our simulation results reveal that electron confinement in DWELL structures strongly depends on QD shape as well as its relative location inside the well.
Keywords
III-V semiconductors; Monte Carlo methods; electronic structure; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor quantum wells; DWELL structures; InAs-InGaAs; dot-in-a-well structures; electron confinement; electronic structures; path integral Monte Carlo method; quantum dot; quantum well; virial energy estimator; Electrons; Energy states; Gallium arsenide; Indium gallium arsenide; Monte Carlo methods; Potential well; Quantum computing; Quantum dot lasers; Quantum dots; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-3543-2
Electronic_ISBN
978-1-4244-3544-9
Type
conf
DOI
10.1109/INEC.2010.5424983
Filename
5424983
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