DocumentCode :
1669133
Title :
The effect of quantum dot shape and position on electron confinement in dot-in-a-well structures
Author :
Batenipour, N. ; Saghafi, K. ; Moravvej-Farshi, M.K.
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Tehran, Iran
fYear :
2010
Firstpage :
1153
Lastpage :
1154
Abstract :
In this paper we present results of our study on electron confinement in dot-in-a-well (DWELL) structures. The structures under investigation consist of an InAs quantum dot (QD) confined in an InGaAs quantum well (QW), which in turn buried in GaAs bulk. We examine DWELL structures of various quantum dot shapes embedded in the same quantum well and calculate their electronic structures. We perform our simulation using path integral Monte Carlo (PIMC) method with virial energy estimator. Our simulation results reveal that electron confinement in DWELL structures strongly depends on QD shape as well as its relative location inside the well.
Keywords :
III-V semiconductors; Monte Carlo methods; electronic structure; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor quantum wells; DWELL structures; InAs-InGaAs; dot-in-a-well structures; electron confinement; electronic structures; path integral Monte Carlo method; quantum dot; quantum well; virial energy estimator; Electrons; Energy states; Gallium arsenide; Indium gallium arsenide; Monte Carlo methods; Potential well; Quantum computing; Quantum dot lasers; Quantum dots; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
Type :
conf
DOI :
10.1109/INEC.2010.5424983
Filename :
5424983
Link To Document :
بازگشت