• DocumentCode
    1669133
  • Title

    The effect of quantum dot shape and position on electron confinement in dot-in-a-well structures

  • Author

    Batenipour, N. ; Saghafi, K. ; Moravvej-Farshi, M.K.

  • Author_Institution
    Dept. of Electr. Eng., Islamic Azad Univ., Tehran, Iran
  • fYear
    2010
  • Firstpage
    1153
  • Lastpage
    1154
  • Abstract
    In this paper we present results of our study on electron confinement in dot-in-a-well (DWELL) structures. The structures under investigation consist of an InAs quantum dot (QD) confined in an InGaAs quantum well (QW), which in turn buried in GaAs bulk. We examine DWELL structures of various quantum dot shapes embedded in the same quantum well and calculate their electronic structures. We perform our simulation using path integral Monte Carlo (PIMC) method with virial energy estimator. Our simulation results reveal that electron confinement in DWELL structures strongly depends on QD shape as well as its relative location inside the well.
  • Keywords
    III-V semiconductors; Monte Carlo methods; electronic structure; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor quantum wells; DWELL structures; InAs-InGaAs; dot-in-a-well structures; electron confinement; electronic structures; path integral Monte Carlo method; quantum dot; quantum well; virial energy estimator; Electrons; Energy states; Gallium arsenide; Indium gallium arsenide; Monte Carlo methods; Potential well; Quantum computing; Quantum dot lasers; Quantum dots; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoelectronics Conference (INEC), 2010 3rd International
  • Conference_Location
    Hong Kong
  • Print_ISBN
    978-1-4244-3543-2
  • Electronic_ISBN
    978-1-4244-3544-9
  • Type

    conf

  • DOI
    10.1109/INEC.2010.5424983
  • Filename
    5424983