• DocumentCode
    1669159
  • Title

    A 1.6GS/s 12b return-to-zero GaAs RF DAC for multiple Nyquist operation

  • Author

    Choe, Myung-Jun ; Baek, Kwang-Hyun ; Teshome, Mesfin

  • Author_Institution
    Rockwell Sci., Thousand Oaks, CA, USA
  • fYear
    2005
  • Firstpage
    112
  • Abstract
    RZ current switches are added to a current steering DAC for high-frequency wideband applications to achieve 800MHz bandwidth at 1st and 2nd Nyquist band without the need for a reverse sinc equalization filter. Implemented in a GaAs HBT process with 4.5 μm2 minimum emitter area, the DAC dissipates 1.2W at -5V with a 1.6GHz clock and 0dBm typical output power.
  • Keywords
    digital-analogue conversion; gallium arsenide; heterojunction bipolar transistors; signal sampling; -5 V; 1.2 W; 1.6 GHz; 12 bit; 800 MHz; GaAs; HBT process; RZ current switches; current steering DAC; high-frequency wideband applications; multiple Nyquist operation; return-to-zero GaAs RF DAC; Capacitance; Clocks; Driver circuits; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Radio frequency; Switches; Temperature; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2005. Digest of Technical Papers. ISSCC. 2005 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8904-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2005.1493894
  • Filename
    1493894
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1669159