Title :
Impact of random dopant fluctuation effect on surrounding gate MOSFETs: from atomic level simulation to circuit performance evaluation
Author :
Wang, Hao ; Ma, Chenyue ; Zhang, Chenfei ; He, Frank ; Zhang, Xing ; Lin, Xinnan
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
This paper investigates the impact of random dopant fluctuation effect on surrounding gate MOSFET, from atomic statistical simulation of device to circuit performance evaluation. The doping profile is generated by an analysis of each lattice atom and then the threshold voltage variation is obtained by device drift-diffusion simulation. Then the circuit performance evaluation is performed by feeding the result into a surrounding-gate MOSFET model. It is shown that a significant fluctuation in threshold voltage is due to the decreasing volume. The circuit simulation results also reveal that a surrounding gate MOSFET based 6-T SRAM presents a promising resistibility to noise disturbance.
Keywords :
MOSFET; SRAM chips; circuit simulation; doping profiles; fluctuations; semiconductor device models; 6-T SRAM; atomic level simulation; atomic statistical simulation; circuit performance evaluation; circuit simulation; doping profile; drift-diffusion simulation; random dopant fluctuation effect; surrounding gate MOSFET model; Analytical models; Circuit optimization; Circuit simulation; Doping profiles; Fluctuations; Lattices; MOSFETs; Performance evaluation; Semiconductor process modeling; Threshold voltage;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424986
