Double-gate SOI MOSFET fabrication from bulk silicon wafer

The double-gate SOI structure is believed to be the most scalable technology down to the 0.02/spl mu/m regime. However, experimental study of double-gate related phenomena has been hindered by the difficulties in fabricating double-gate devices. In this paper, a simple and yet flexible method to fabricate an experimental double-gate device is proposed. The double-gate device is actually fabricated on a silicon film recrystallized from amorphous silicon (referred as large grain polysilicon-on-insulator or LPSOI film), which is not truly single crystal SOI. However, material and device characteristics show that the film is equivalent to single crystal SOI film with high defect density, like SOI wafers produced in the early days. Thus, all physical properties of double gate SOI devices are preserved.