Title :
High temperature continuous wave operation of Sb-based monolithic EP-VCSEL with selectively etched tunnel-junction apertures
Author :
Sanchez, D. ; Cerutti, L. ; Tournié, E.
Author_Institution :
Inst. d´´Electron. du Sud, Univ. Montpellier 2, Montpellier, France
Abstract :
We report on a monolithic Sb-based Vertical Cavity Surface Emitting Laser operating at CW up to 70°C. The structure is made of two AlAsSb/GaSb mirrors, type-I InGaAsSb/AlGaAsSb wells and an InAs/GaSb tunnel junction. By selectively under-etching this tunnel junction, we improve the VCSEL performances and demonstrate low threshold current and high temperature continuous wave operation.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; surface emitting lasers; AlAsSb-GaSb; InAs-GaSb; InGaAsSb-AlGaAsSb; continuous wave operation; monolithic EP-VCSEL; selectively etched tunnel junction apertures; temperature 70 degC; threshold current; vertical cavity surface emitting laser; Apertures; Gas lasers; Junctions; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
