A genetic neural network modeling of GaN HEMTs for RF power amplifiers design

Author

Jarndal, Anwar ; Pillai, Swaroop ; Abdulqader, Hussein ; Ghannouchi, Fadhel M.

Author_Institution

Electr. & Comput., Eng. Dept., Univ. of Nizwa, Nizwa, Oman

fYear

2011

Firstpage

1

Lastpage

6

Abstract

A genetic neural network based large-signal model for GaN HEMT transistor suitable for designing power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software and requires only DC and S-parameter measurements. The modeling procedure was applied to a 4-W packaged GaN-on-Si HEMT and the developed model is validated by comparing its large-signal simulation to measured data. The model has been employed for simulating a switching-mode inverse class-F power amplifier. Very good agreement between the amplifier simulation and measurement shows the validity of the model.

Keywords

high electron mobility transistors; neural nets; power amplifiers; CAD software; GaN; HEMT; RF power amplifier design; amplifier simulation; genetic neural network modeling; switching-mode inverse class-F power amplifier; Computational modeling; Gallium nitride; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; Solid modeling; GaN HEMT; genetic optimization; large-signal modeling; neural networks; power amplifier design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2011 International Conference on

Conference_Location

Hammamet

Print_ISBN

978-1-4577-2207-3

Type

conf

DOI

10.1109/ICM.2011.6177342

Filename

6177342