Carbon nanostructures field emission devices

Author

Wong, Y.M. ; Kang, W.P. ; Davidson, Jennifer L. ; Choi, B.K. ; Hofmeister, W.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA

fYear

2005

Firstpage

278

Lastpage

279

Abstract

In this paper, carbon nanostructures (CNS) utilizing high power (5 kW) and high working pressure (120 Torr) were synthesized using microwave plasma chemical vapor deposition (MPCVD), similar to the growth conditions for polycrystalline diamond synthesis. The effects of trimethylboron (TMB, 1000 ppm) addition, a typical p-type doping gas for CVD diamond, on the morphologies and field emission properties of the CNS were also investigated. This study is also extended to include fabrication of field emission triode structure with self-aligned gate. Field emission triode is a three-terminal device capitalizing on the proximity of the gate electrode to the electron emitting cathode to reduce the operating voltage of the vacuum device.

Keywords

carbon; field emission; nanostructured materials; nanotechnology; plasma CVD; vacuum microelectronics; 120 torr; 5 kW; C; carbon nanostructures; electron emitting cathode; field emission devices; field emission properties; field emission triode structure; high power; high working pressure; microwave plasma chemical vapor deposition; p-type doping gas; self-aligned gate; three-terminal device; trimethylboron addition; Carbon dioxide; Chemical vapor deposition; Diamond-like carbon; Doping; Microwave devices; Morphology; Nanostructures; Plasma chemistry; Plasma devices; Plasma properties; MPCVD; Raman; carbon nanostructures; field emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2005. IVNC 2005. Technical Digest of the 18th International

Print_ISBN

0-7803-8397-4

Type

conf

DOI

10.1109/IVNC.2005.1619594

Filename

1619594