Title :
A unified drain current model for nanoscale double-gate and surrounding-gate MOSFETs incorporating velocity saturation
Author :
Zhang, Lining ; Zhou, Xingye ; Xu, Yiwen ; Chen, Lin ; Zhou, Wang ; Li, Yingxue ; He, Frank ; Chan, Mansun
Author_Institution :
Key Lab. of Integrated Microsyst., Peking Univ. Shenzhen Grad. Sch., Shenzhen, China
Abstract :
A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating velocity saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified drain current model derivation of the two device structure. Extensive two dimensional (2D) and three dimensional (3D) device simulations are performed to validate the proposed model. Symmetry property of the proposed unified current model is obtained with the exponent factor n=2 in Cauhey-Thomas Model.
Keywords :
MOSFET; circuit simulation; Caughey-Thomas engineering mobility model; nanoscale double-gate MOSFET; surrounding-gate MOSFET; three dimensional device simulation; two dimensional device simulation; unified charge-based core model; unified drain current model; velocity saturation; Electron devices; Electrostatics; Geometry; Helium; Integrated circuit modeling; MOSFETs; Nanoscale devices; Semiconductor device modeling; Solid modeling; Testing;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424994
