Electromigration failure development in modern dual-damascene interconnects

Author

de Orio, R.L. ; Ceric, Hajdin ; Cervenka, Johann ; Selberherr, Siegfried

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2009

Firstpage

23

Lastpage

28

Abstract

The electromigration failure development in typical copper dual-damascene interconnect structures is analyzed based on numerical simulations. The origin of the lognormal distribution of electromigration times to failure is investigated. Also, electromigration-induced void formation and evolution in advanced 0.18 μm dual-damascene lines are simulated and the results are compared with experiments. It is shown that the lognormal distribution of the grain sizes leads to lognormal distributions of the electromigration lifetimes. Moreover, the void nucleation sites and main features of void development are highly dependent on the microstructure of the interconnect lines.

Keywords

copper; electromigration; integrated circuit interconnections; nucleation; numerical analysis; electromigration failure development; electromigration-induced void formation; grain size; lognormal distribution; modern dual-damascene interconnects; numerical simulations; size 0.18 mum; void nucleation sites; Copper; Electromigration; Grain boundaries; Grain size; Mathematical model; Microstructure; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Very Large Scale Integration (VLSI-SoC), 2009 17th IFIP International Conference on

Conference_Location

Florianopolis

Print_ISBN

978-1-4577-0237-2

Type

conf

DOI

10.1109/VLSISOC.2009.6041325

Filename

6041325