Superjunction MOS devices — From device development towards system optimization

Superjunction devices are enabling very fast switching performance and driving the market especially in applications where efficiency and power densities are key requirements. Two main technology concepts - multiple EPI layers and trench filling - are known. Over the years, a continuous reduction of the area specific on-resistance can be observed, leading to smaller device capacitances and inherent increasing switching speed. To widen the market position even in applications where fast switching transients are critical, a systematic approach is necessary to find an optimum trade-off between EMI and efficiency requirements. This paper presents the actual state of the art of superjunction device concepts and shows how new MOSFET generations can combine the benefits of compensation devices like low area specific on-resistance and low capacitive losses with the strength of conventional power semiconductors like good control of the switching behavior by the gate resistance and low radiation noise generation.