Title :
The role of externally applied body-bias on the hot-carrier degradation of partially depleted SOI N-MOSFETs
Author :
Dieudonne, F. ; Jomaah, J. ; Ioannou, D. ; Raynaud, C. ; Balestra, F.
Author_Institution :
Lab. de Phys. des Composants a Semiconducteurs, ENSERG, Grenoble, France
Abstract :
No significant variations of the hot-carrier degradation of partially depleted SOI N-MOSFETs were found under the effect of an externally applied body-bias. This very interesting feature was attributed to the weak secondary impact ionization in thin film SOI. As a consequence, the reliability of such SOI devices is substantially improved as compared to bulk ones under the presence of body-bias.
Keywords :
MOSFET; hot carriers; impact ionisation; silicon-on-insulator; Si; externally applied body-bias; hot-carrier degradation; partially depleted SOI N-MOSFETs; reliability; thin film SOI; weak secondary impact ionization; Degradation; Hot carrier effects; Hot carriers; Impact ionization; MOSFET circuits; Semiconductor films; Silicon; Stress; Substrates; Transconductance;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958017
