DocumentCode
1669695
Title
The role of externally applied body-bias on the hot-carrier degradation of partially depleted SOI N-MOSFETs
Author
Dieudonne, F. ; Jomaah, J. ; Ioannou, D. ; Raynaud, C. ; Balestra, F.
Author_Institution
Lab. de Phys. des Composants a Semiconducteurs, ENSERG, Grenoble, France
fYear
2001
Firstpage
123
Lastpage
124
Abstract
No significant variations of the hot-carrier degradation of partially depleted SOI N-MOSFETs were found under the effect of an externally applied body-bias. This very interesting feature was attributed to the weak secondary impact ionization in thin film SOI. As a consequence, the reliability of such SOI devices is substantially improved as compared to bulk ones under the presence of body-bias.
Keywords
MOSFET; hot carriers; impact ionisation; silicon-on-insulator; Si; externally applied body-bias; hot-carrier degradation; partially depleted SOI N-MOSFETs; reliability; thin film SOI; weak secondary impact ionization; Degradation; Hot carrier effects; Hot carriers; Impact ionization; MOSFET circuits; Semiconductor films; Silicon; Stress; Substrates; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2001 IEEE International
Conference_Location
Durango, CO, USA
ISSN
1078-621X
Print_ISBN
0-7803-6739-1
Type
conf
DOI
10.1109/SOIC.2001.958017
Filename
958017
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