Title :
Evaluating manufacturability of radiation-hardened SOI substrates
Author :
Alles, M. ; Dolan, B. ; Hughes, H. ; McMarr, P. ; Gouker, P. ; Liu, M.
Author_Institution :
Ibis Technol. Corp., Danvers, MA, USA
Abstract :
The goal of this work was to transfer a radiation-hardening process to a commercial SOI wafer manufacturer, optimize the process for manufacturing and wafer quality, and demonstrate that the process is compatible with commercial SOI wafers. Over the period of the project three types of SOI substrates were examined having BOX thicknesses between 100 and 200 nm, consistent with the state-of-the-art substrates in use by radiation-hardened SOI and commercial SOI substrate users. Two different regimes for silicon thickness were examined, one for partially depleted and one for fully depleted target applications.
Keywords :
CMOS integrated circuits; integrated circuit manufacture; radiation hardening (electronics); silicon-on-insulator; substrates; 100 to 200 nm; BOX thicknesses; SOI wafer manufacturer; Si; evaluating manufacturability; fully depleted target applications; partially depleted target applications; radiation-hardened SOI substrates; silicon thickness; wafer quality; CMOS technology; Circuits; Laboratories; Manufacturing; Materials testing; Radiation effects; Radiation hardening; Silicon; Space technology; Threshold voltage;
Conference_Titel :
SOI Conference, 2001 IEEE International
Conference_Location :
Durango, CO, USA
Print_ISBN :
0-7803-6739-1
DOI :
10.1109/SOIC.2001.958021
