DocumentCode
1669908
Title
Sub-threshold time-resolved spectroscopy of Mid-UV AlGaN laser diode structures pseudomorphically grown on bulk AlN
Author
Garrett, Gregory A. ; Rotella, Paul ; Shen, Hongen ; Wraback, Michael ; Wunderer, Thomas ; Chua, Christopher L. ; Yang, Zhihong ; Northrup, John E. ; Johnson, Noble M.
Author_Institution
Sensors & Electron Devices Directorate, U.S. Army Res. Lab., Adelphi, MD, USA
fYear
2012
Firstpage
1
Lastpage
2
Abstract
AlGaN based heterostructures exhibit photo-pumped stimulated emission out to 237 nm with a switched from TE to TM polarized observed. PL lifetimes reflect the stronger exciton binding energy of the higher Al content material.
Keywords
III-V semiconductors; aluminium compounds; optical materials; photoluminescence; semiconductor lasers; time resolved spectroscopy; ultraviolet spectra; ultraviolet spectroscopy; wide band gap semiconductors; AlGaN-AlN; exciton binding; mid-ultraviolet laser diode; photoluminescence lifetime; photopumped stimulated emission; pseudomorphical growth; subthreshold time-resolved spectroscopy; wavelength 237 nm; Aluminum gallium nitride; Diode lasers; Gallium nitride; Optical resonators; Spectroscopy; Stimulated emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location
San Jose, CA
Print_ISBN
978-1-4673-1839-6
Type
conf
Filename
6326275
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